Development of photoconductive nitrogen-doped zinc oxide

Authors

Heinritz Majella S. Miguel National Institute of Physics, University of the Philippines Diliman
Precy Mae C. Calaque National Institute of Physics, University of the Philippines Diliman
Jefferson M. Abrenica National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

A nitrogen-doped zinc oxide (N:ZnO) photoconductor is successfully fabricated from a metal-semiconductor interface between an indium metal and N:ZnO thin films of varying at% N:Zn doping concentration. X-ray diffractometry (XRD) profile showed successful growth of thin films. The undoped thin flm had n-type conductivity while the doped thin films have p-type conductivity. Scanning electron microscopy (SEM) images of the thin films showed the effect of increasing doping concentration. Current-voltage(I-V) curves of the photoconductors indicated a photoresistive behavior. Resistivity measurements obtained from the I-V curves revealed that as doping concentration increases, resistivity decreases, and that the 10 at%
photoconductor had the lowest resistivity. Photoresponse curves of the 5 at% and 10 at% photoconductors showed an effective photoconductor that can react to light at varying frequencies.

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Issue

2013: Proceedings of the 31st Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2013-2A-6

Section

Materials Science

Published

2013-10-23

How to Cite

[1]

HMS Miguel, PMC Calaque, JM Abrenica, and AS Somintac, Development of photoconductive nitrogen-doped zinc oxide, Proceedings of the Samahang Pisika ng Pilipinas 31, SPP2013-2A-6 (2013). URL: https://proceedings.spp-online.org/article/view/SPP2013-2A-6.