Thermo–optic coefficient of porous silicon

Authors

  • Lorenzo P. Lopez Condensed Matter Physics Laboratory, National Institute of Physics, University of the Philippines, Diliman
  • Maria Angela B. Faustino National Institute of Physics, University of the Philippines Diliman
  • Niel Gabriel E. Saplagio National Institute of Physics, University of the Philippines Diliman
  • Arvin I. Mabilangan National Institute of Physics, University of the Philippines, Diliman
  • Armando S. Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

Thermo-optic coefficients of porous silicon having the same thickness but different porosities have been calculated. Boron-doped silicon substrates have been electrochemically etched in a 12% HF solution at current densities 2.5mA/cm2 and 15mA/cm2 to fabricate ~1μm thick porous silicon. Temperature-dependent reflectance spectroscopy was performed to calculate the refractive index, porosity, and thermo-optic coefficient of the samples. Using the Bruggeman effective medium approximation formula, the calculated porosities of the samples were found to be 66.37% and 77.29% respectively. In the temperature range of 303.15K–484.15K, thermo-optic coefficients of -4.0x10-4K-1 and -3.0x10-4K-1 were obtained. Simulation data was also obtained using a Sellmeier fit to verify the reflectance spectra of porous silicon. 

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Issue

Article ID

SPP2013-2A-2

Section

Materials Science

Published

2013-10-23

How to Cite

[1]
LP Lopez, MAB Faustino, NGE Saplagio, AI Mabilangan, and AS Somintac, Thermo–optic coefficient of porous silicon, Proceedings of the Samahang Pisika ng Pilipinas 31, SPP2013-2A-2 (2013). URL: https://proceedings.spp-online.org/article/view/SPP2013-2A-2.