Optical lithography under broadband excitation

Abstract

We simulate optical lithography of a voxel under broadband excitation. The photoresist is exposed to an illumination with a broad spectral range. The degree of the reaction is given by the concentration of the photoactive component (PAC). Development is simulated by setting a threshold concentration and the size of the voxel is determined from the size of the region that satisfies the threshold. We find that the size of the voxel grows with increasing exposure. Moreover, we find that the size of the voxels grow with increasing bandwidth showing the effect of broadband excitation on optical lithography.