Low temperature scanning tunneling microscopy and spectroscopy of undoped LT-GaAs
We report for the first time on the scanning tunneling microscopy (STM) and spectroscopy (STS) of undoped low temperature grown GaAs (LT-GaAs) measured at 4.7 K. The high resistivity of the LT-GaAs layer was compensated by growing it on top of a (100) n+-GaAs substrate due to the carrier injection at the interface. LT-GaAs was shown to have p-type conductivity based on the STS spectrum. Stable imaging is achieved at a sample bias of -2.5 V.
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