Temperature-dependent photoluminescence and terahertz time-domain spectroscopy of single-layered InAs/GaAs quantum dots grown via molecular beam epitaxy

  • Alexander E De los Reyes National Institute of Physics, University of the Philippines Diliman
  • John Daniel E Vasquez Materials Science and Engineering Program, University of the Philippines Diliman
  • Lorenzo P Lopez, Jr Materials Science and Engineering Program, University of the Philippines Diliman
  • Hannah R Bardolaza Materials Science and Engineering Program, University of the Philippines Diliman
  • Che-Yu Chang Department of Physics, National Sun Yat-sen University
  • Der-Jun Jang Department of Physics, National Sun Yat-sen University
  • Armando S Somintac National Institute of Physics, University of the Philippines Diliman
  • Arnel A Salvador National Institute of Physics, University of the Philippines Diliman
  • Elmer S Estacio National Institute of Physics, University of the Philippines Diliman

Abstract

We investigate the temperature-dependence of the photoluminescence (PL) and terahertz (THz) emission characteristics of InAs/GaAs single-layered quantum dots (SLQDs) grown via molecular beam epitaxy (MBE). The temperature-behavior of the PL peaks and PL intensities were described using the Varshni and Arrhenius equation, respectively. The THz emission from the SLQDs was found to increase as temperature increases, possibly due to increase in the number of photo-carriers undergoing transport instead of recombination.

Published
2018-05-23
How to Cite
[1]
A. De los Reyes, J. D. Vasquez, L. Lopez, H. Bardolaza, C.-Y. Chang, D.-J. Jang, A. Somintac, A. Salvador, and E. Estacio. Temperature-dependent photoluminescence and terahertz time-domain spectroscopy of single-layered InAs/GaAs quantum dots grown via molecular beam epitaxy, Proceedings of the Samahang Pisika ng Pilipinas 36, SPP-2018-3C-02 (2018). URL: https://paperview.spp-online.org/proceedings/article/view/SPP-2018-3C-02.
Section
Condensed Matter and Materials Science