Temperature-dependent photoluminescence and terahertz time-domain spectroscopy of single-layered InAs/GaAs quantum dots grown via molecular beam epitaxy
We investigate the temperature-dependence of the photoluminescence (PL) and terahertz (THz) emission characteristics of InAs/GaAs single-layered quantum dots (SLQDs) grown via molecular beam epitaxy (MBE). The temperature-behavior of the PL peaks and PL intensities were described using the Varshni and Arrhenius equation, respectively. The THz emission from the SLQDs was found to increase as temperature increases, possibly due to increase in the number of photo-carriers undergoing transport instead of recombination.
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