Terahertz emission in GaAs grown on Si(100) at different substrate temperatures

  • Karl Cedric Paguntalan Gonzales National Institute of Physics, University of the Philippines Diliman
  • Elizabeth Ann Puran Prieto National Institute of Physics, University of the Philippines Diliman
  • Gerald Angelo R Catindig National Institute of Physics, University of the Philippines Diliman
  • Mae Agatha Cepeda Tumanguil-Quitoras National Institute of Physics, University of the Philippines Diliman
  • Alexander E De Los Reyes National Institute of Physics, University of the Philippines Diliman
  • Maria Angela B Faustino National Institute of Physics, University of the Philippines Diliman
  • Horace Andrew F Husay National Institute of Physics, University of the Philippines Diliman
  • Armando Soriano Somintac National Institute of Physics, University of the Philippines Diliman
  • Arnel Angud Salvador National Institute of Physics, University of the Philippines Diliman
  • Elmer Surat Estacio National Institute of Physics, University of the Philippines Diliman

Abstract

Terahertz (THz) emission in gallium arsenide grown on silicon (GaAs on Si) at different substrate temperatures, Ts = 320oC, 520oC and 630oC, is presented in this study. An LTG-GaAs buffer layer system was implemented to compensate for the ~4.1% lattice mismatch in the heteroepitaxy of GaAs on Si(100) by molecular beam epitaxy. X-ray results confirmed the high crystalline quality of the GaAs epitaxial layers on Si. The GaAs crystal quality improved with increasing Si substrate temperature. The THz emission of GaAs on Si grown at Ts = 520oC, measured by THz time-domain spectroscopy in reflection geometry, exhibited the highest THz intensity despite not having the highest crystalline quality. The THz emission efficiency was dependent on the Si substrate temperature. Additionally, for LTG-GaAs on Si grown at Ts = 320oC, the THz emission was comparable to LTG-GaAs grown on semi-insulating GaAs (SI-GaAs). For GaAs on Si grown at Ts = 630oC, the THz emission was significantly higher than GaAs on SI-GaAs. The heteroepitaxy of GaAs on Si proved effective in enhancing the THz emission.

Published
2018-05-27
How to Cite
[1]
K. C. Gonzales, E. A. Prieto, G. A. Catindig, M. A. Tumanguil-Quitoras, A. De Los Reyes, M. A. Faustino, H. A. Husay, A. Somintac, A. Salvador, and E. Estacio. Terahertz emission in GaAs grown on Si(100) at different substrate temperatures, Proceedings of the Samahang Pisika ng Pilipinas 36, SPP-2018-2B-05 (2018). URL: https://paperview.spp-online.org/proceedings/article/view/SPP-2018-2B-05.
Section
Condensed Matter and Materials Science