Electrical properties of Schottky-Ohmic pair contact compared to Schottky-Schottky and Ohmic-Ohmic pair contact in planar configuration

Authors

John Paul Ferrolino National Institute of Physics, University of the Philippines Diliman
Lance Kristoffer Pulutan National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

Schottky and Ohmic contacts were deposited on nGaAs substrates using AuBe and AuGe respectively fabricated in a planar configuration. Samples with finger patterns of Schottky-Ohmic pair, Schottky-Schottky pair, and Ohmic-Ohmic pair contact had their I-V characteristics measured. I-V characteristics were also measured after annealing the 3 samples at 460 C for 30 seconds. The Schottky barrier heights and series resistances were computed. It was observed that the electrical properties of the Schottky and Ohmic contacts used have certain effects on the Schottky-Ohmic pair.

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Issue

2015: Proceedings of the 33rd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2015-PB-15

Section

Poster Session PB

Published

2015-06-03

How to Cite

[1]

JP Ferrolino, LK Pulutan, and AS Somintac, Electrical properties of Schottky-Ohmic pair contact compared to Schottky-Schottky and Ohmic-Ohmic pair contact in planar configuration, Proceedings of the Samahang Pisika ng Pilipinas 33, SPP-2015-PB-15 (2015). URL: https://proceedings.spp-online.org/article/view/1221.