Improved linearity, stability, and thermal performance of multi-mesa-channel AlGaN/GaN HEMTs

Authors

  • Joel Tacla Asubar University of Fukui
  • Hirokuni Tokuda Graduate School of Engineering, University of Fukui
  • Masaaki Kuzuhara Graduate School of Engineering, University of Fukui
  • Zenji Yatabe Priority Organization for Innovation and Excellence, Kumamoto University
  • Kenya Nishiguchi Research Center for Integrated Quantum Electronics, Hokkaido University
  • Tamotsu Hashizume Research Center for Integrated Quantum Electronics, Hokkaido University

DOI:

https://doi.org/10.20526/pisika.01a18.11

Abstract

With its wide bandgap of 3.4 eV, gallium nitride (GaN) is considered as a key semiconductor material for realizing ultra-low-loss power devices. However, GaN-based devices is still plagued by current collapse, which is the temporary reduction of current after application of electrical stress. In this work, we present the state-of-art Multi-Mesa-Channel (MMC) AlGaN/GaN HEMT being developed in our laboratory. The MMC HEMT is fabricated in a way to realize parallel mesa-shaped nano-channels separated by trenches. Investigations have revealed that the MMC HEMT is highly resistant to current collapse and other instabilities, making it a leading power electronics prospect.

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Published

2018-12-24

How to Cite

[1]
JT Asubar, H Tokuda, M Kuzuhara, Z Yatabe, K Nishiguchi, and T Hashizume, Improved linearity, stability, and thermal performance of multi-mesa-channel AlGaN/GaN HEMTs, PISIKA - Journal of the Physics Society of the Philippines 1, 11 (2018). URL: https://paperview.spp-online.org/pisika/article/view/01a18.11.

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