Textured semi-insulating Gallium Arsenide (100) exhibiting enhanced terahertz emission

Authors

Rhenish Simon National Institute of Physics, University of the Philippines Diliman
Jonathan Ray Abat National Institute of Physics, University of the Philippines Diliman
Cyril Sadia National Institute of Physics, University of the Philippines Diliman
Maria Isabel Carillo National Institute of Physics, University of the Philippines Diliman
Maria Herminia Balgos National Institute of Physics, University of the Philippines Diliman
Joselito Muldera National Institute of Physics, University of the Philippines Diliman
Elmer Estacio National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

This study investigates the enhancement of terahertz (THz) emission from textured semi-insulating gallium arsenide (GaAs) (100). Wafers were etched at different etching times to texturize the surface. Reflectance spectroscopy was used to examine the texturization. The THz emission of the sample was investigated using THz time domain spectroscopy. An enhanced THz emission was observed for the sample etched for 30 minutes. Azimuthal angle dependence of the terahertz emission suggests no change in the orientation of the crystal GaAs. Small angle x-ray diffractrometry confirms the crystallinity of the surface is preserved.

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Issue

2013: Proceedings of the 31st Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2013-PB-26

Section

Poster Session PB

Published

2013-10-23

How to Cite

[1]

R Simon, JR Abat, C Sadia, MI Carillo, MH Balgos, J Muldera, E Estacio, and A Somintac, Textured semi-insulating Gallium Arsenide (100) exhibiting enhanced terahertz emission, Proceedings of the Samahang Pisika ng Pilipinas 31, SPP2013-PB-26 (2013). URL: https://proceedings.spp-online.org/article/view/SPP2013-PB-26.