Thin film sputtering deposition of MAX phase Ti₃SiC₂ on polycarbonate substrate using methane as a carbon source

Authors

Arjay Sura Department of Physical Sciences, College of Science
Hamdi Muhyuddin Barra Physics Department, Mindanao State University, Marawi City
Rommel Paulo Viloan National Institute of Physics, University of the Philippines Diliman
Michelle Marie Villamayor National Institute of Physics, University of the Philippines Diliman
Henry Ramos National Institute of Physics, University of the Philippines Diliman

Abstract

Thin film deposition of MAX phase Ti₃SiC₂ on polycarbonate substrate was done using the magnetized sheet plasma negative ion source facility via reactive sputtering deposition. Titanium and silicon targets were co-deposited onto polycarbonate substrate together with carbon by breaking down the CH₄ gas introduced in the ion source. The varied parameter in this study was the ratio of CH₄:Ar. The synthesized thin films were characterized using XRD spectroscopy, FTIR-ATR and contact angle measurement. XRD patterns of the deposited films showed the formation of Ti₃SiC₂ (105) and (1013), Ti₅Si₃ and TiC (111) phases.

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Issue

2013: Proceedings of the 31st Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2013-PA-31

Section

Poster Session PA

Published

2013-10-23

How to Cite

[1]

A Sura, HM Barra, RP Viloan, MM Villamayor, and H Ramos, Thin film sputtering deposition of MAX phase Ti3SiC2 on polycarbonate substrate using methane as a carbon source, Proceedings of the Samahang Pisika ng Pilipinas 31, SPP2013-PA-31 (2013). URL: https://proceedings.spp-online.org/article/view/SPP2013-PA-31.