Demonstration of photovoltaic cell performance based on electroless etched silicon nanowires

Authors

Philippe Martin Baguio Tingzon National Institute of Physics, University of the Philippines Diliman
Joselito O. Muldera National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

A p-type (100) 1.2 kΩ silicon photovoltaic cell with nanowire enhancements was fabricated. Silicon nanowires (Si NW) were grown on the n-doped surface via a one-step ”top-down” Ag-assisted electroless etching. The electrical and optical properties of the photovoltaic cells were obtained via taking scanning electron microscope, I-V curve, and reflectance spectroscopy of the photovoltaic cells. A 1.34% efficiency was obtained. The placement of the silicon nanowires in between the fingers of the photovoltaic cells increased the maximum amount of light absorbed due to its excellent anti-reflective property.

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Issue

2013: Proceedings of the 31st Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2013-4A-3

Section

Materials Science

Published

2018-07-30

How to Cite

[1]

PMB Tingzon, JO Muldera, and AS Somintac, Demonstration of photovoltaic cell performance based on electroless etched silicon nanowires, Proceedings of the Samahang Pisika ng Pilipinas 31, SPP2013-4A-3 (2018). URL: https://proceedings.spp-online.org/article/view/SPP2013-4A-3.