Synthesis of Ti₃SiC₂ thin film using a magnetized sheet plasma source

Abstract

Titanium silicon carbide (Ti₃SiC₂) a MAX-phase compound, was synthesized and deposited on stainless steel substrates with dimensions 15x15x0.5 mm3 by physical vapor deposition via a magnetized sheet plasma source. Titanium and silicon solids, and methane gas (CH₄) were used as elemental sources of Ti, Si, and C respectively. The solid targets were biased from -250 to -350V and were sputtered by Ar plasma with a discharge current of 4A and a discharge potential of 50V. The flow rate of the gases were varied with CH₄:Ar ratios of 1:4, 1:5 and 1:8.The samples exhibited thin-film deposits with metallic gray to blue color. Scanning electron micrograph scan shows smooth surface of the deposited substrate. The EDX spectrum of the samples showed the presence of the three elements in the ternary compound. While XRD characterizations confirmed the synthesis of Ti₃SiC₂ as the peaks corresponding to Ti₃SiC₂ (002), (104) and (1013) facets were seen.