A proof-of-concept p-n junction silicon nanowire photodetector device

Authors

Neil Irvin Cabello National Institute of Physics, University of the Philippines Diliman
Joseph Christopher Ragasa National Institute of Physics, University of the Philippines Diliman
Niel Gabriel Saplagio National Institute of Physics, University of the Philippines Diliman
Nemesio Mangila National Institute of Physics, University of the Philippines Diliman
Marvin Laguerta National Institute of Physics, University of the Philippines Diliman
Fritz Christian Awitan National Institute of Physics, University of the Philippines Diliman
John Daniel Vasquez National Institute of Physics, University of the Philippines Diliman
Jonathan Azares National Institute of Physics, University of the Philippines Diliman
Joselito Muldera National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

A p-n junction device was fabricated by spray-doping of orthophosphoric acid-methanol solution on p-type silicon nanowires formed by silver- assisted chemical etching. From its current-voltage curves, the device was observed to generate photocurrent under laser illumination. The obtained waveforms from the device irradiated by laser light passed through a mechanical chopper showed that the device’s response times makes it suitable as a photodetector.

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Issue

2012: Proceedings of the 30th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2012-PB-19

Section

Poster Session PB

Published

2012-10-22

How to Cite

[1]

NI Cabello, JC Ragasa, NG Saplagio, N Mangila, M Laguerta, FC Awitan, JD Vasquez, J Azares, J Muldera, A Salvador, and A Somintac, A proof-of-concept p-n junction silicon nanowire photodetector device, Proceedings of the Samahang Pisika ng Pilipinas 30, SPP2012-PB-19 (2012). URL: https://proceedings.spp-online.org/article/view/SPP2012-PB-19.