Annealing study of AlN thin films grown on Si(100) and Si(111) substrates via reactive RF Magnetron sputtering

Authors

Nemesio Mangila National Institute of Physics, University of the Philippines Diliman
Peter Jeffrey Maloles National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

For this study, AlN thin films were subjected to annealing and the crystallinity was investigated via XRD experiments. AlN thin films were deposited on Si(100) and Si(111) via RF Magnetron sputtering. The films were subjected to heat treatment at 1000°C for 30 minutes and 1 hour. Results from the XRD plots show that annealing improves the crystallinity of the thin film where the crystal structure of the AlN films have preferred crystal planes depending on the substrate.

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Issue

2012: Proceedings of the 30th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2012-6A-4

Section

Condensed Matter Physics

Published

2012-10-22

How to Cite

[1]

N Mangila, PJ Maloles, A Somintac, and A Salvador, Annealing study of AlN thin films grown on Si(100) and Si(111) substrates via reactive RF Magnetron sputtering, Proceedings of the Samahang Pisika ng Pilipinas 30, SPP2012-6A-4 (2012). URL: https://proceedings.spp-online.org/article/view/SPP2012-6A-4.