Monte Carlo simulation of cobalt-60 ion irradiation into silicon carbide–metal-oxide field effect transistor (SiC-MOSFET)

  • Khristine Rae Fua Fobar Department of Physical Science, Polytechnic University of the Philippines
  • Daniel Vincent Morales Navalta Department of Physical Sciences, Polytechnic University of the Philippines
  • Lea May Abonita Olandez Department of Physical Sciences, Polytechnic University of the Philippines

Abstract

Semiconductors are widely used for switching and amplifying electronic signals in electronic devices. But, as the transistors scale down in size, the need for performance integration has accelerated the scaling trend in devices parameter. This study utilizes SRIM simulations to calculate the electronic and nuclear stopping of a target atom as it interacts with the ion to determine the damaged induced by a utilized cobalt-60 (Co-60) into a silicon carbide–metal-oxide field effect transistor (SiC-MOSFET). Compton Effect in ion collision attained by irradiating 100 keV - 10 MeV energy levels given that a single simulation on each energy level were consists of 3000 ions. The experiment was performed on three types of metal gates: poly-silicon, molybdenum and tantalum. The simulation of poly-silicon was imposed as the basis in the selection of an efficient substitute for the said material. Simulation on the metallic gate exhibits a good results and it shows that between the two metal gates, molybdenum yields a better result. Thus, molybdenum is a much efficient material as a replacement for the poly-silicon gate that is facing a depletion issue on its lattice.

Published
2020-09-08
How to Cite
[1]
K. R. Fobar, D. V. Navalta, and L. M. Olandez. Monte Carlo simulation of cobalt-60 ion irradiation into silicon carbide–metal-oxide field effect transistor (SiC-MOSFET), Proceedings of the Samahang Pisika ng Pilipinas 38, SPP-2020-3A-05 (2020). URL: https://paperview.spp-online.org/proceedings/article/view/SPP-2020-3A-05.
Section
3A/4G/5G Condensed Matter and Materials Science (Short Presentations)