Terahertz emission from MBE-grown InGaAs/InP and InAs/GaSb films excited by 1550 nm femtosecond laser pulses

  • Cyril S Salang Materials Science and Engineering Program, University of the Philippines Diliman
  • Dean Von Johari Casilana Narag Materials Science and Engineering Program, University of the Philippines Diliman
  • Rommel Jagus Materials Science and Engineering Program, University of the Philippines Diliman
  • Craig Egan Allistair D. Tan National Institute of Physics, University of the Philippines Diliman
  • Gerald Angelo R. Catindig National Institute of Physics, University of the Philippines Diliman
  • Roni Andig National Institute of Physics, University of the Philippines Diliman
  • Mae Agatha C. Tumanguil-Quitoras Materials Science and Engineering Program, University of the Philippines Diliman
  • Alexander De Los Reyes National Institute of Physics, University of the Philippines Diliman
  • Ivan Cedrick M. Verona National Institute of Physics, University of the Philippines Diliman
  • Hannah R. Bardolaza Materials Science and Engineering Program, University of the Philippines Diliman
  • Armando S Somintac National Institute of Physics, University of the Philippines Diliman
  • Arnel A Salvador National Institute of Physics, University of the Philippines Diliman
  • Elmer S Estacio National Institute of Physics, University of the Philippines Diliman

Abstract

We investigate the performance of molecular beam epitaxy (MBE)-grown Indium Arsenide on Gallium Antimonide (InAs/GaSb) and Indium Gallium Arsenide on Indium Phosphide (InGaAs/InP) as terahertz (THz) radiation emitter when photoexcited by 1550 nm-wavelength femtosecond (fs) laser pulses. The emitted THz radiation of both samples has approximately 2 ps pulse width and 2 THz bandwidth. A 35% higher THz radiation peak-to-peak intensity was obtained from InGaAs/InP compared to InAs/GaSb due to the former's greater resistivity and laser penetration depth. Spectral dips corresponding to water vapor absorption can be observed within the usable frequency bandwidth in the power spectra of the samples. This implies that the samples' THz emission using 1550 nm excitation source can be used for spectroscopic fingerprinting. Our results can be used in the development of cost-effective and compact fs laser-based THz-Time Domain Spectroscopy (THz-TDS) systems.

Published
2020-09-11
How to Cite
[1]
C. Salang, D. V. J. Narag, R. Jagus, C. E. A. Tan, G. A. Catindig, R. Andig, M. A. Tumanguil-Quitoras, A. De Los Reyes, I. C. Verona, H. Bardolaza, A. Somintac, A. Salvador, and E. Estacio. Terahertz emission from MBE-grown InGaAs/InP and InAs/GaSb films excited by 1550 nm femtosecond laser pulses, Proceedings of the Samahang Pisika ng Pilipinas 38, SPP-2020-2F-04 (2020). URL: https://paperview.spp-online.org/proceedings/article/view/SPP-2020-2F-04.
Section
Condensed Matter and Materials Science