Spin Hall effect of visible light due to monolayer graphene on SiO2/Si
We have investigated the Imbert-Fedorov (IF) shift, commonly known as the Spin Hall effect of light, due to monolayer graphene on SiO2/Si. We have numerically calculated the transverse IF shifts using the transfer matrix method and determined which incident wavelength gives the maximum shift. We have calculated physical shifts of up to 1.6μm when using 45o linearly polarized and 543-nm wavelength incident light. This study presents the potential of the Spin Hall effect of light as a tool for characterization of graphene and other 2D materials.