Goos-Hänchen shift: An optical phenomenon to measure thin film thickness of SiO2

  • Jadze Princeton Casilana Narag National Institute of Physics, University of the Philippines Diliman
  • Nathaniel Hermosa National Institute of Physics, University of the Philippines Diliman
  • Jenny Lou Sagisi National Institute of Physics, University of the Philippines Diliman
  • Niña Angelica Zambale National Institute of Physics, University of the Philippines Diliman

Abstract

Thin films have found a niche in industry, technology and academic research. They are in semiconductors, display panels and wearable electronics. Here, we present a method for measuring the thickness of thin films by exploiting the Goos-Hanchen shift - an optical phenomenon that is a correction to the law of reflection. We calculated the GH shift for an air-SiO2-Si thin film to demonstrate the technique. We showed that we can distinguish thickness in the order of 1 nm to 10 nm. This technique is a simple, all optical, non-destructive method to measure thin film thickness.

Published
2019-05-24
How to Cite
[1]
J. P. Narag, N. Hermosa, J. L. Sagisi, and N. A. Zambale. Goos-Hänchen shift: An optical phenomenon to measure thin film thickness of SiO2, Proceedings of the Samahang Pisika ng Pilipinas 37, SPP-2019-3B-06 (2019). URL: https://paperview.spp-online.org/proceedings/article/view/SPP-2019-3B-06.
Section
Ultrafast Optics, Photonics, and Terahertz Physics