Goos-Hänchen shift: An optical phenomenon to measure thin film thickness of SiO₂

Authors

Jadze Princeton Casilana Narag National Institute of Physics, University of the Philippines Diliman
Nathaniel Hermosa National Institute of Physics, University of the Philippines Diliman
Jenny Lou Sagisi National Institute of Physics, University of the Philippines Diliman
Niña Angelica Zambale National Institute of Physics, University of the Philippines Diliman

Abstract

Thin films have found a niche in industry, technology and academic research. They are in semiconductors, display panels and wearable electronics. Here, we present a method for measuring the thickness of thin films by exploiting the Goos-Hanchen shift - an optical phenomenon that is a correction to the law of reflection. We calculated the GH shift for an air-SiO2-Si thin film to demonstrate the technique. We showed that we can distinguish thickness in the order of 1 nm to 10 nm. This technique is a simple, all optical, non-destructive method to measure thin film thickness.

Downloads

Issue

2019: Proceedings of the 37th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2019-3B-06

Section

Ultrafast Optics, Photonics, and Terahertz Physics

Published

2019-05-24

How to Cite

[1]

JPC Narag, N Hermosa, JL Sagisi, and NA Zambale, Goos-Hänchen shift: An optical phenomenon to measure thin film thickness of SiO2, Proceedings of the Samahang Pisika ng Pilipinas 37, SPP-2019-3B-06 (2019). URL: https://proceedings.spp-online.org/article/view/SPP-2019-3B-06.