Effect of DC bias during contact electrification of muscovite mica using tapping mode AFM-KPFM

  • Jose Manuel Esmeria, Jr Physics Department, De La Salle University Manila
  • Terencio Lacuesta Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños
  • Romeric Pobre Physics Department, De La Salle University Manila

Abstract

A microscopic level study of contact electrification of cleaved muscovite mica disk was performed using a tapping mode scanning system of the atomic force microscope. Using a fixed amplitude set point, and scan speed, image of surface potential during contact electrification was recorded using Kelvin Probe Force Microscope for both negative and positive dc biasing of the n- type Silicon tip. Surface potential sign flip was observed to when the dc biased was increased from 0 to ±3 V. These changes in the surface potential is attributed to energy band-bending and charge back tunneling between mica and n- type Silicon tip during contact electrification

Published
2019-05-17
How to Cite
[1]
J. Esmeria, T. Lacuesta, and R. Pobre. Effect of DC bias during contact electrification of muscovite mica using tapping mode AFM-KPFM, Proceedings of the Samahang Pisika ng Pilipinas 37, SPP-2019-2E-02 (2019). URL: https://paperview.spp-online.org/proceedings/article/view/SPP-2019-2E-02.
Section
Condensed Matter and Materials Science