Effects of argon and oxygen plasma treatment on optoelectronic properties of silicon nanowires
The effects of modification on the surface of silicon nanowires (SiNWs) by argon (Ar) and oxygen (O2) plasma treatment were investigated. SiNWs were fabricated via metal-assisted electroless etching. The fabricated SiNWs samples were subjected to plasma treatment with different plasma source (Ar, O2 and mixed Ar-O2). The Raman spectra of SiNWs exhibited slight shift in peaks that due to laser heating. Based on surface wettability, subjecting SiNWs to plasma treatment decreases its surface roughness that makes the SiNWs samples hydrophilic. The percentage reflectance of the SiNWs samples have furtherly decrease that causes increase in percentage absorbance when subjected to plasma treatment. The change in I-V characteristics were also studied. Reduction on conductivity of the plasma treated SiNWs samples were observed due to the increased surface to volume ratio.
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