Drift-diffusion in InAs based on ambipolar transport
The results of this study show the one-order of magnitude difference in terahertz radiation power of p-InAs and n-InAs via the ambipolar transport equation in the low-excitation regime. The excess electrons and holes diffuse with a single effective diffusion coefficient equal to the diffusion coefficient of the excess minority carrier. Hence, the higher THz power of the p-InAs can be attributed to its higher effective diffusion coefficient.
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