Estimation of refractive index for thin film aluminum nitride on quartz substrates using envelope method

Authors

  • Nemesio Mangila National Institute of Physics, University of the Philippines Diliman
  • Celestino Andrew Borja National Institute of Physics, University of the Philippines Diliman
  • Oliver Semblante Cebu Technological University
  • Claude Ceniza National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman
  • Armando S. Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

Aluminum Nitride (AlN) films were deposited using Reactive RF Magnetron Sputtering with thicknesses of 0.86 µm and 1.26µm on quartz substrates. The AlN films were deposited using total gas pressure of 8x10-3mbar, with 1:3 Ar-N2 partial pressure ratio. The films were highly transparent in the visible region (380-750nm) and exhibited strong absorption in the UV range (200-300nm). From the optical transmission profiles, the refractive indexes of the thin films were computed. For the 0.86µm the estimated refractive index ranges from 1.5-1.64 and 1.26µm AlN ranges from 1.4-1.64.

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Article ID

SPP-2010-PA-44

Section

Poster Session PA

Published

2010-10-25

How to Cite

[1]
N Mangila, CA Borja, O Semblante, C Ceniza, AA Salvador, and AS Somintac, Estimation of refractive index for thin film aluminum nitride on quartz substrates using envelope method, Proceedings of the Samahang Pisika ng Pilipinas 28, SPP-2010-PA-44 (2010). URL: https://proceedings.spp-online.org/article/view/SPP-2010-PA-44.