Preliminary investigation using Raman spectroscopy on nanoporous silicon

Authors

  • Joseph Christopher R. Ragasa National Institute of Physics, University of the Philippines Diliman
  • Rhona Olivia M. Gonzales National Institute of Physics, University of the Philippines Diliman
  • Arvin I. Mabilangan National Institute of Physics, University of the Philippines Diliman
  • Michael J. Defensor National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman
  • Armando S. Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

Preliminary investigation using Raman scattering spectroscopy was performed to determine the relationship of the Raman spectra (RS) to the porosity of porous silicon (pSi). It was found that the RS peak of high porosity pSi is broader and has greater downshift as compared to that of lower porosity pSi. Measurements were done with respect to the RS of bulk crystalline silicon. It was established that the RS peak location was proportional to the increase in porosity of pSi due to strain-induced lattice mismatch. The results showed that Raman spectroscopy is a possible method for approximating the porosity of the material.

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Issue

Article ID

SPP-2010-PA-33

Section

Poster Session PA

Published

2010-10-25

How to Cite

[1]
JCR Ragasa, ROM Gonzales, AI Mabilangan, MJ Defensor, AA Salvador, and AS Somintac, Preliminary investigation using Raman spectroscopy on nanoporous silicon, Proceedings of the Samahang Pisika ng Pilipinas 28, SPP-2010-PA-33 (2010). URL: https://proceedings.spp-online.org/article/view/SPP-2010-PA-33.