Characterization of extremely thick macroporous silicon layer synthesized via electrochemical etching

Authors

Rhona Olivia M. Gonzales National Institute of Physics, University of the Philippines Diliman
Roma S. Lopez Department of Physical Science, Polytechnic University of the Philippines
Jobelle J. Gimeno Department of Physical Science, Polytechnic University of the Philippines
Ryan T. Diocampo Department of Physical Science, Polytechnic University of the Philippines
Neil Irvin F. Cabello National Institute of Physics, University of the Philippines Diliman
Arvin I. Mabilangan National Institute of Physics, University of the Philippines Diliman
Rogelio G. Dizon Department of Physical Science, Polytechnic University of the Philippines
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

Extremely thick macroporous silicon layers were fabricated from n-type silicon (100) wafers by electrochemical etching in ethanoic solution of hydrofluoric acid. At constant anodization time and electrolytic concentration the effects of current density variation on porous silicon formation were investigated using scanning electron microscopy (SEM), x-ray diffraction (XRD) and photoluminescence (PL).

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Issue

2010: Proceedings of the 28th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2010-6B-02

Section

Materials Physics

Published

2010-10-25

How to Cite

[1]

ROM Gonzales, RS Lopez, JJ Gimeno, RT Diocampo, NIF Cabello, AI Mabilangan, RG Dizon, and AS Somintac, Characterization of extremely thick macroporous silicon layer synthesized via electrochemical etching, Proceedings of the Samahang Pisika ng Pilipinas 28, SPP-2010-6B-02 (2010). URL: https://proceedings.spp-online.org/article/view/SPP-2010-6B-02.