Optical and electrical characterization of an interdigitated structured metal-semiconductor photodiode fabricated on n-GaAs substrate

Authors

RB Payod National Institute of Physics, University of the Philippines Diliman
S Crosby National Institute of Physics, University of the Philippines Diliman
D Tabacon National Institute of Physics, University of the Philippines Diliman
DA Vasquez National Institute of Physics, University of the Philippines Diliman
F Awitan National Institute of Physics, University of the Philippines Diliman
R Jaculbia National Institute of Physics, University of the Philippines Diliman
M Defensor National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

A metal-semiconductor photodiode with interdigitated finger structure was successfully fabricated and characterized. The metal used for the schottky contact was Ti/Au and the substrate semiconductor was an ndoped GaAs. The turn-on voltage of the photodiode was 0.2 V while the breakdown voltage was -0.5 V. The relatively low measured values were attributed to the high doping concentration of the substrate. Photocurrent generation started at 1.4 eV which approximately corresponds to the GaAs energy bandgap.

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Issue

2010: Proceedings of the 28th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2010-5A-06

Section

Materials Physics

Published

2010-10-25

How to Cite

[1]

R Payod, S Crosby, D Tabacon, D Vasquez, F Awitan, R Jaculbia, M Defensor, AA Salvador, and AS Somintac, Optical and electrical characterization of an interdigitated structured metal-semiconductor photodiode fabricated on n-GaAs substrate, Proceedings of the Samahang Pisika ng Pilipinas 28, SPP-2010-5A-06 (2010). URL: https://proceedings.spp-online.org/article/view/SPP-2010-5A-06.