Terahertz emission from MBE-grown InAs and GaAs thin films on Si substrates excited in the transmission-geometry

Authors

Elmer S. Estacio Institute of Laser Engineering, Osaka University
Satoru Takatori Institute of Laser Engineering, Osaka University
Minh Hong Pham Institute of Laser Engineering, Osaka University
Takashi Yoshioka Institute of Laser Engineering, Osaka University
Tomoharu Nakazato Institute of Laser Engineering, Osaka University
Marilou Cadatal-Raduban Institute of Laser Engineering, Osaka University
Toshihiko Shimizu Institute of Laser Engineering, Osaka University
Nobuhiko Sarukura Institute of Laser Engineering, Osaka University
Masanori Hangyo Institute of Laser Engineering, Osaka University
Christopher T. Que Research Center for Development of Far-Infrared Region, University of Fukui
Masahiko Tani Research Center for Development of Far-Infrared Region, University of Fukui
Tadataka Edamura Central Research Laboratory, Hamamatsu Photonics, Japan
Makoto Nakajima Institute for Solid State Physics, The University of Tokyo
John Vincent Misa National Institute of Physics, University of the Philippines Diliman
Rafael Jaculbia National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Terahertz radiation was generated from femtosecond laser-pumped MBE-grown InAs and GaAs thin films on Si substrates. Results showed that InAs/Si and GaAs/Si films can be excited in both reflection and transmission geometries. The InAs/Si film exhibited weaker emission for both excitation cases but the absence of outstanding spectral features in its emission spectrum makes it a more viable THz spectroscopy source. Moreover, excitation fluence dependence data showed that the InAs/Si film saturates more easily; which is primarily due to the laser’s limited penetration depth in this sample.

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Issue

2010: Proceedings of the 28th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2010-5A-03

Section

Materials Physics

Published

2010-10-25

How to Cite

[1]

ES Estacio, S Takatori, MH Pham, T Yoshioka, T Nakazato, M Cadatal-Raduban, T Shimizu, N Sarukura, M Hangyo, CT Que, M Tani, T Edamura, M Nakajima, JV Misa, R Jaculbia, AS Somintac, and AA Salvador, Terahertz emission from MBE-grown InAs and GaAs thin films on Si substrates excited in the transmission-geometry, Proceedings of the Samahang Pisika ng Pilipinas 28, SPP-2010-5A-03 (2010). URL: https://proceedings.spp-online.org/article/view/SPP-2010-5A-03.