Inhomogeneous broadening in Al-rich AlGaN/AlN single quantum wells

Authors

Ryan G. Banal Department of Electronic Science and Engineering, Kyoto University
Mitsuru Funato Department of Electronic Science and Engineering, Kyoto University
Yoichi Kawakami Department of Electronic Science and Engineering, Kyoto University

Abstract

Although high-quality AlₓGa₁₋ₓN/AlN quantum wells (QWs) have already been obtained, their photoluminescence (PL) spectra are still broad due to several factors including alloy broadening, intra-well fluctuations in well-width and alloy compositions, and inter-well variations. To eliminate inter-well variations, AlGaN/AlN single QWs (SQWs) were fabricated. Upon investigating their microscopic optical properties, the SQWs still exhibited broad PL, indicating that the remaining factors play an important role in determining the emission linewidth. Cathodoluminescence showed that microscopic compositional fluctuations within the well cause peak position shift of 3 nm (~96 meV), suggesting that they are the major contributing factor to the broad linewidth.

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Issue

2010: Proceedings of the 28th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2010-3A-02

Section

Materials Physics

Published

2010-10-25

How to Cite

[1]

RG Banal, M Funato, and Y Kawakami, Inhomogeneous broadening in Al-rich AlGaN/AlN single quantum wells, Proceedings of the Samahang Pisika ng Pilipinas 28, SPP-2010-3A-02 (2010). URL: https://proceedings.spp-online.org/article/view/SPP-2010-3A-02.