Interface electric fields of cuprous oxide/silicon heterostructures for enhanced terahertz emission

Authors

  • Horace Andrew Husay National Institute of Physics, University of the Philippines Diliman
  • Luce Vida Sayson Materials Science and Engineering Program, University of the Philippines Diliman
  • Valynn Katrine Mag-usara Research Center for the Development of Far-Infrared Region, University of Fukui
  • Shun Nakae Research Center for the Development of Far-Infrared Region, University of Fukui
  • Arven Cafe National Institute of Physics, University of the Philippines Diliman
  • Erick John Carlo Solibet National Institute of Physics, University of the Philippines Diliman
  • Elmer Estacio National Institute of Physics, University of the Philippines Diliman
  • Masahiko Tani Research Center for the Development of Far-Infrared Region, University of Fukui
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

Cuprous oxide thin films were deposited on Si substrates having different doping types through spray pyrolysis to investigate the terahertz (THz) generation mechanism from cuprous oxide/Si (Cu2O/Si) heterostructures. Reflection-mode terahertz time-domain spectroscopy (THz-TDS) showed that Cu2O/Si heterostructures emitted THz radiation stronger by an order of magnitude than the Si substrate. This was attributed to the enhanced electric field at the Cu2O/Si interface. The TDS waveform phase was shown to be independent of the doping type of Si. This showed that the photocarriers that caused the emission of the THz electric field did not change in transport direction. Our results are consistent with simulations using the Anderson model under the depletion approximation.

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Article ID

SPP-2016-3C-04

Section

Condensed Matter Physics and Materials Science

Published

2016-08-18

How to Cite

[1]
HA Husay, LV Sayson, VK Mag-usara, S Nakae, A Cafe, EJC Solibet, E Estacio, M Tani, A Salvador, and A Somintac, Interface electric fields of cuprous oxide/silicon heterostructures for enhanced terahertz emission, Proceedings of the Samahang Pisika ng Pilipinas 34, SPP-2016-3C-04 (2016). URL: https://proceedings.spp-online.org/article/view/SPP-2016-3C-04.