Seedless electroplating on a rectangular etched grating on n-Si/undoped Silicon substrate

Authors

Francesca Isabel de Vera National Institute of Physics, University of the Philippines Diliman
Jonathan Azares National Institute of Physics, University of the Philippines Diliman
Shiela Crosby National Institute of Physics, University of the Philippines Diliman
Fritz Christian Awitan National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman
Roland Sarmago National Institute of Physics, University of the Philippines Diliman

Abstract

A method for seedless electroplating of Au between sidewalls of etched Si substrates was demonstrated. The etched rectangular pattern is approximately 4um (line) by 4um (spacing) with 4um height. Soaking the substrates into a phosphoric acid solution followed by heat treatment and rapid thermal annealing provides sufficient conductivity on the surfaces of the rectangular walls to allow seedless electroplating of gold. Samples were soaked in Au solution at 70^oC and electroplated with increasing current density.

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Issue

2011: Proceedings of the 29th Samahang Pisika ng Pilipinas National Physics Congress

Article ID

SPP2011-PB-14

Section

Poster Session PB

Published

2019-02-20

How to Cite

[1]

FI de Vera, J Azares, S Crosby, FC Awitan, A Somintac, and R Sarmago, Seedless electroplating on a rectangular etched grating on n-Si/undoped Silicon substrate, Proceedings of the Samahang Pisika ng Pilipinas 29, SPP2011-PB-14 (2019). URL: https://proceedings.spp-online.org/article/view/SPP2011-PB-14.