Growth of Indium Aluminum Nitride using reactive RF-magnetron sputtering

Authors

Claude Ceniza National Institute of Physics, University of the Philippines Diliman
Oliver Semblante National Institute of Physics, University of the Philippines Diliman
Nemesio Mangila National Institute of Physics, University of the Philippines Diliman
Renato Daclan National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

Thin films of indium aluminum nitride were grown on glass and silicon (111) substrates using reactive rf-magnetron sputtering without substrate heating. The grown films of indium aluminum nitride with high indium content and good crystalline quality were acheived. Optical transmission of the sputtered indium aluminum nitride films had a significant red shift due to the of indium content.

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Issue

2011: Proceedings of the 29th Samahang Pisika ng Pilipinas National Physics Congress

Article ID

SPP2011-PA-44

Section

Poster Session PA

Published

2011-10-24

How to Cite

[1]

C Ceniza, O Semblante, N Mangila, R Daclan, and A Somintac, Growth of Indium Aluminum Nitride using reactive RF-magnetron sputtering, Proceedings of the Samahang Pisika ng Pilipinas 29, SPP2011-PA-44 (2011). URL: https://proceedings.spp-online.org/article/view/SPP2011-PA-44.