MBE-growth and x-ray diffraction of GaAs on p-GaSb(100) for intense terahertz emission

Authors

Cyril Sadia National Institute of Physics, University of the Philippines Diliman
Mae Agatha Tumanguil National Institute of Physics, University of the Philippines Diliman
Aleena Maria Laganapan National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman
Elmer Estacio National Institute of Physics, University of the Philippines Diliman
Christopher Que Research Center for Development of Far-Infrared Region, University of Fukui
Kohji Yamamoto Research Center for Development of Far-Infrared Region, University of Fukui
Masahiko Tani Research Center for Development of Far-Infrared Region, University of Fukui
Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Gallium arsenide (GaAs) thin films were grown on p-type gallium antimonide (GaSb) substrates via molecular beam epitaxy. The heterostructure generated intense terahertz signals when irradiated with femtosecond laser. Reciprocal space maps showed the top GaAs layers are relaxed. The calculated lattice constant of the GaAs films was 5.65 Å.

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Issue

2011: Proceedings of the 29th Samahang Pisika ng Pilipinas National Physics Congress

Article ID

SPP2011-2C-4

Section

Condensed Matter and Materials Physics

Published

2011-10-24

How to Cite

[1]

C Sadia, MA Tumanguil, AM Laganapan, A Somintac, E Estacio, C Que, K Yamamoto, M Tani, and A Salvador, MBE-growth and x-ray diffraction of GaAs on p-GaSb(100) for intense terahertz emission, Proceedings of the Samahang Pisika ng Pilipinas 29, SPP2011-2C-4 (2011). URL: https://proceedings.spp-online.org/article/view/SPP2011-2C-4.