Investigation of strain in an oxide-confined GaAs/AlGaAs PIN heterostructure through spot-dependent photoluminescence spectroscopy
We report on the observation of strain in an oxide-confined gallium arsenide/aluminum gallium arsenide (GaAs/AlGaAs) PIN heterostructure through spot-dependent photoluminescence (PL). The PIN structure was grown via molecular beam epitaxy. The layers were etched into 250 μm cylindrical mesa structures and thermally oxidized. Room temperature photoluminescence (PL) measurements were done using a micro-PL setup equipped with a motorized stage. The AlGaAs PL peak at the oxidized region of the PIN structure was observed to redshift by ~10.3 meV from the PL measured at the unoxidized region located at the center of the mesa. This redshift is attributed to the tensile strain on the AlGaAs layers on top of the aluminum arsenide (AlAs) layer that has been converted to aluminum oxide (Al2O3). This technique provides a quick way of measuring the strain in heterojunction-based devices such as vertical-cavity surface emitting lasers.
By submitting their manuscript to the Samahang Pisika ng Pilipinas (SPP) for consideration, the Authors warrant that their work is original, does not infringe on existing copyrights, and is not under active consideration for publication elsewhere.
Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.