Investigation of strain in an oxide-confined GaAs/AlGaAs PIN heterostructure through spot-dependent photoluminescence spectroscopy

  • Horace Andrew F. Husay National Institute of Physics, University of the Philippines Diliman
  • Vernalyn T. Copa Materials Science and Engineering Program, University of the Philippines Diliman
  • John Paul R. Ferrolino Materials Science and Engineering Program, University of the Philippines Diliman
  • Gerald Angelo R. Catindig National Institute of Physics, University of the Philippines Diliman
  • Karl Cedric P. Gonzales National Institute of Physics, University of the Philippines Diliman
  • Neil Irvin F. Cabello National Institute of Physics, University of the Philippines Diliman
  • Kerphy Liandro M. Patrocenio National Institute of Physics, University of the Philippines Diliman
  • Rommel J. Jagus National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman
  • Armando S. Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

We report on the observation of strain in an oxide-confined gallium arsenide/aluminum gallium arsenide (GaAs/AlGaAs) PIN heterostructure through spot-dependent photoluminescence (PL). The PIN structure was grown via molecular beam epitaxy. The layers were etched into 250 μm cylindrical mesa structures and thermally oxidized. Room temperature photoluminescence (PL) measurements were done using a micro-PL setup equipped with a motorized stage. The AlGaAs PL peak at the oxidized region of the PIN structure was observed to redshift by ~10.3 meV from the PL measured at the unoxidized region located at the center of the mesa. This redshift is attributed to the tensile strain on the AlGaAs layers on top of the aluminum arsenide (AlAs) layer that has been converted to aluminum oxide (Al2O3). This technique provides a quick way of measuring the strain in heterojunction-based devices such as vertical-cavity surface emitting lasers.

Published
2017-06-07
How to Cite
[1]
H. A. Husay, V. Copa, J. P. Ferrolino, G. A. Catindig, K. C. Gonzales, N. I. Cabello, K. L. Patrocenio, R. Jagus, A. Salvador, and A. Somintac. Investigation of strain in an oxide-confined GaAs/AlGaAs PIN heterostructure through spot-dependent photoluminescence spectroscopy, Proceedings of the Samahang Pisika ng Pilipinas 35, SPP-2017-PA-35 (2017). URL: https://paperview.spp-online.org/proceedings/article/view/265.
Section
Poster Session A (Materials Science, Instrumentation, and Photonics)