Terahertz emission characteristics of semi-insulating, zinc and manganese-doped gallium arsenide films
We investigate the terahertz (THz) emission characteristics of semi-insulating gallium arsenide (SI-GaAs), zinc-doped GaAs (Zn-GaAs) and manganese-doped GaAs (Mn-GaAs) films. The THz emission from the samples were measured using a pump-probe type terahertz time-domain spectroscopy setup (THz-TDS). The roles of doping on the THz emission characteristics of the samples were studied. Results have shown that Mn-GaAs is a strong THz emitter, with a total THz radiated power that is 6X and 260X stronger than SI-GaAs and Zn:GaAs, respectively.