Photocarrier dynamics in MBE-grown GaAs-Al<sub>x</sub>Ga<sub>1-x</sub>As quantum well investigated via temperature-dependent photoluminescence and terahertz time-domain spectroscopy
We report on the temperature effects on the dynamics and recombination characteristics of molecular beam epitaxy (MBE)-grown GaAs/AlxGa1-xAs quantum well using photoluminescence and terahertz time-domain spectroscopy. The photoluminescence spectra undergo a redshift as temperature increases, as described by the Varshni equation. Furthermore, the terahertz emission was found to increase as temperature increases. This result is attributed to the increase in the number of phonon acting as scattering sites in the crystal lattice at higher temperatures, thus effectively decreasing carrier recombination lifetime.
By submitting their manuscript to the Samahang Pisika ng Pilipinas (SPP) for consideration, the Authors warrant that their work is original, does not infringe on existing copyrights, and is not under active consideration for publication elsewhere.
Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.