Effects of post-deposition annealing on the structural properties of femtosecond pulsed laser deposited ZnO on silicon substrates

  • Joseph Aban de Mesa National Institute of Physics, University of the Philippines Diliman
  • Jessa Jayne Miranda National Institute of Physics, University of the Philippines Diliman
  • Hernanie Salazar, Jr. National Institute of Physics, University of the Philippines Diliman
  • Roland Sarmago National Institute of Physics, University of the Philippines Diliman
  • Wilson Garcia National Institute of Physics, University of the Philippines Diliman
Keywords: Laser ablation (79.10.Eb), Femtosecond techniques (78.47.J-), Pulsed laser deposition (81.10 Fg)

Abstract

Undoped zinc oxide (ZnO) was successfully deposited on silicon (100) for 3 hours via femtosecond pulsed laser deposition (fs-PLD). The deposition was carried out with oxygen background gas at room temperature. The deposited samples were annealed inside a tube furnace at 400°C and 500°C. X-ray diffraction analysis (XRD) was used to characterize the structural properties of deposited samples.  The XRD spectra revealed (110) peak of ZnO on silicon (100). The FWHM of the (110) peak decreases with annealing temperature indicating that the structure of ZnO deposits were dependent on the annealing temperature. The deviation of diffraction angle of (110) peak with annealing temperature can be attributed to the induced thermal stress by the silicon substrate.

Published
2017-06-07
Issue
Proceedings of the 35th Samahang Pisika ng Pilipinas Physics Conference
Section
Poster Session A (Experimental Materials Science and Photonics)

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