Photocarrier dynamics in GaAs/AlGaAs modulation-doped heterostructure from temperature-dependent terahertz time domain emission spectroscopy and photoreflectance spectroscopy

  • Hannah R. Bardolaza National Institute of Physics, University of the Philippines Diliman
  • John Daniel Vasquez National Institute of Physics, University of the Philippines Diliman
  • Miguel Bacaoco National Institute of Physics, University of the Philippines Diliman
  • Alexander De Los Reyes National Institute of Physics, University of the Philippines Diliman
  • Lorenzo Lopez, Jr. National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman
  • Elmer R. Estacio National Institute of Physics, University of the Philippines Diliman
  • Roland Sarmago National Institute of Physics, University of the Philippines Diliman

Abstract

Photocarrier dynamics in GaAs/AlGaAs modulation-doped heterostructure was investigated using terahertz time domain emission spectroscopy and photoreflectance spectroscopy. Results are discussed in the framework of the temperature dependence of junction electric field. The information may allow us to conveniently investigate the electric field via THz time domain spectroscopy.

Published
2017-06-07
Section
Poster Session A (Materials Science, Instrumentation, and Photonics)