Surface modification of (100) p-type silicon through Ar-O2 and Ar-N2 plasma treatment
Silicon wafers were surface modified by the treatment of argon-oxygen (Ar-O2) and argon-nitrogen (Ar-N2) RF-frequency plasma, and characterized their changes in surface property using contact angle measurement and Fourier transform infrared spectroscopy (FTIR). The treatment of silicon wafers by Ar-O2 and Ar-N2 resulted in increased hydrophilicity for both treatment regimes. Silicon treated Ar-N2 plasma sample has the greater surface free energy compared to Silicon treated Ar-O2 plasma and the untreated sample. Subsequent Fourier-transform infrared spectroscopy results confirmed the presence of characteristic Si-O and Si-N bonds; however, due to the adsorbence of water, many of these peaks were not readily apparent. Surface morphological studies may be performed in order to view further effects of the plasma treatment.
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