Synthesis of amorphous Zirconium nitride films at different Ar/N₂ ratios via the plasma sputter-type negative ion source

Authors

Ron Darell A. Aves National Institute of Physics, University of the Philippines Diliman
Jenica Rozette Y. Uy National Institute of Physics, University of the Philippines Diliman
Aren Renz Y. Centeno National Institute of Physics, University of the Philippines Diliman
Henry J. Ramos National Institute of Physics, University of the Philippines Diliman

Abstract

Zirconium nitride films were deposited on stainless steel substrates using plasma sputter-type negative ion source. This allows the production of ZrN films where substrate heating is inessential and energy of ions can be modified, allowing the control of chemical composition of the film. The films were synthesized at different %N₂(10, 15, 25, 50) in the Ar and N₂ gas mixture. The target potential is -300V, discharge voltage is 60V and the deposition time is two hours. The samples were characterized by XRD, and the presence of amorphous Zr₃N₄ was confirmed. The optimum gas ratio was determined to be 15% N₂ on Ar.

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Issue

2015: Proceedings of the 33rd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2015-PB-31

Section

Poster Session PB

Published

2015-06-03

How to Cite

[1]

RDA Aves, JRY Uy, ARY Centeno, and HJ Ramos, Synthesis of amorphous Zirconium nitride films at different Ar/N2 ratios via the plasma sputter-type negative ion source, Proceedings of the Samahang Pisika ng Pilipinas 33, SPP-2015-PB-31 (2015). URL: https://proceedings.spp-online.org/article/view/1237.