Temperature-dependent photoluminescence studies of MBE-grown InAs/GaAs quantum dots

Authors

Crizia C. Alcantara National Institute of Physics, University of the Philippines Diliman
John Daniel E. Vasquez National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
Elmer S. Estacio National Institute of Physics, University of the Philippines Diliman

Abstract

Single-layered InAs/GaAs QDs grown by molecular beam epitaxy (MBE) was investigated by temperature dependent photo luminescence (PL) spectroscopy. The sample temperature was varied from room temperature to 11K. The peak positions of the PL spectra were fitted to the Varshni model of the temperature-dependent semiconductor bandgap. In addition, the PL from a 2D quantum well (QW) and 3D (bulk) semiconductor systems were also taken for comparison. Results showed that the single-layered QDs (SLQD), 90Å multiple quantum wells (MQW) and bulk GaAs were fitted well with the Varshni model and suggests that the Varshni model may hold true for zero dimensional systems such as QDs. It also suggests that the SLQD PL is band-to-band in origin.

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Issue

2015: Proceedings of the 33rd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2015-5A-04

Section

Photonics and Terahertz, Optics and Signal Processing

Published

2015-06-03

How to Cite

[1]

CC Alcantara, JDE Vasquez, AA Salvador, AS Somintac, and ES Estacio, Temperature-dependent photoluminescence studies of MBE-grown InAs/GaAs quantum dots, Proceedings of the Samahang Pisika ng Pilipinas 33, SPP-2015-5A-04 (2015). URL: https://proceedings.spp-online.org/article/view/1136.