Synthesis of hydrogenated amorphous carbon films via CH4-H2 plasma in a DC hollow-cathode discharge facility

Abstract

Amorphous hydrogenated carbon films (a-C:H) were deposited on Si via DC hollow cathode discharge facility. The effect of hydrogen dilution of the CH₄/H₂ plasma and filling pressure on the films deposited was investigated using Raman spectroscopy, FTIR spectroscopy, and x-ray diffraction to find the best parameters for a-C:H synthesis. Raman spectra showed formation of a-C:H films with 85% and 70% hydrogen at higher filling pressure, and a shift of G peak to lower wavelength and FWHM with decreased hydrogen gas content. FTIR Spectra showed a presence of bands of alkane CH, C=C stretch, and =C-H bend in the films. X-ray diffraction confirmed the amorphous characteristic of the film with optimized parameter.