Topological materials

Authors

Hsin Lin Department of Physics and Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore

Abstract

Topological materials host various novel quantum phases of electrons which are characterized by band topology and topologically protected surface/edge states. Despite recent progress, intense worldwide research activity in search of new classes of topological materials is continuing unabated. This interest is driven by the need for materials with greater structural flexibility and tunability to enable viable applications in spintronics and quantum computing. We have used first-principles band theory computations to successfully predict many new classes of 3D topologically interesting materials, including Bi₂Se₃ series, the ternary half-Heusler compounds, TlBiSe₂ family, Li₂AgSb-class, and GeBi₂Te₄ family as well as topological crystalline insulator (TCI) SnTe family and Weyl semimetals TaAs, SrSi₂, (Mo,W)Te₂, Ta₃S₂ and LaAlGe. I will also highlight our recent work on 2D topological materials. These include Bi/Sb honeycombs for TCI, gated silicene for spintronics applications, and hydrogenated III-V thin films as robust topological insulators with large band gaps.

About the Speaker

Hsin Lin, Department of Physics and Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore

Hsin Lin is an Assistant Professor in the Department of Physics and Centre for Advanced 2D Materials and Graphene Research Centre at National University of Singapore (NUS). He has been awarded a SGD 3 million Singapore National Research Foundation Fellowship Grant in 2013. Before joining NUS in July 2013, he was a Research Assistant Professor in Prof. Bansil’s group in the Department of Physics at Northeastern University, where he received his Ph.D. in 2008. He obtained his M.S. degree from National Tsing Hua University (Taiwan) and B.S. degree from National Taiwan University. His research focuses on the electronic structure and spectroscopy of exotic quantum states of matter such as topological insulators, high temperature superconductors, and colossal magnetoresistance materials. In collaboration with Prof. Hasan's experimental group at Princeton University, Dr. Lin has predicted and discovered for the very first-time in the world several new classes of topological materials with novel theoretical calculations. His discoveries are not limited to one material or a single family of such materials but a wide variety of materials, including topological insulators Bi₂Se₃, half-Heuslers, TlBiSe₂, first topological crystalline insulator SnTe, first Weyl semimetal TaAs, double Weyl SrSi₂, and type-II Weyl LaAlGe.
Hsin Lin acknowledges support by the Singapore National Research Foundation under NRF Award No. NRF-NRFF2013-03.

Downloads

Issue

2016: Proceedings of the 34th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2016-PT-4

Section

Invited Presentations

Published

2016-08-18

How to Cite

[1]

H Lin, Topological materials, Proceedings of the Samahang Pisika ng Pilipinas 34, SPP-2016-PT-4 (2016). URL: https://proceedings.spp-online.org/article/view/SPP-2016-PT-4.