Terahertz emission from InSb and GaAs under 650 mT magnetic field

Authors

Alexander De los Reyes National Institute of Physics, University of the Philippines Diliman
Lorenzo Lopez, Jr. National Institute of Physics, University of the Philippines Diliman
Joselito Muldera National Institute of Physics, University of the Philippines Diliman
Elizabeth Ann Prieto National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman
Kohji Yamamoto Research Center for the Development of Far-Infrared Region, University of Fukui
Masahiko Tani Research Center for the Development of Far-Infrared Region, University of Fukui
Elmer Estacio National Institute of Physics, University of the Philippines Diliman

Abstract

The effects of an external magnetic field (B-field) on the terahertz (THz) emission from doped indium antimonide (InSb) and gallium arsenide (GaAs) wafers were compared. Results have shown that the THz emission from InSb (p-InSb and n-InSb) increased, independent of the B-field polarity. In contrast, the THz emission from GaAs (p-GaAs and n-GaAs) showed preference for enhancement in one B-field polarity. The opposite polarity resulted to an attenuation of the THz signal. These differences in the B-field enhancement characteristics are attributed to significant differences in the effective masses of electrons and holes in InSb and GaAs.

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Issue

2016: Proceedings of the 34th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2016-3B-03

Section

Optics and Photonics

Published

2016-08-18

How to Cite

[1]

A De los Reyes, L Lopez, J Muldera, EA Prieto, A Somintac, A Salvador, K Yamamoto, M Tani, and E Estacio, Terahertz emission from InSb and GaAs under 650 mT magnetic field, Proceedings of the Samahang Pisika ng Pilipinas 34, SPP-2016-3B-03 (2016). URL: https://proceedings.spp-online.org/article/view/SPP-2016-3B-03.