Determining the dominant THz mechanism of highly doped silicon by applying an external magnetic field in the THz-TDS set-up

Authors

Philippe Martin B. Tingzon National Institute of Physics, University of the Philippines Diliman
Lorenzo Lopez, Jr. Materials Science Engineering Program, University of the Philippines Diliman
Alexander De los Reyes National Institute of Physics, University of the Philippines Diliman
Joselito Muldera National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman
Elmer Estacio National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

The dominant terahertz emission mechanism of highly doped silicon was determined by applying an external magnetic field of 0.65 T parallel to the surface of the sample. It was found via time-domain terahertz spectroscopy that with +0.65 and -0.65 T, a 14.49% increase and -3.71% decrease in terahertz emission was observed with almost no phase shift. Highly doped Si has a dominant surface field mechanism.

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Issue

2016: Proceedings of the 34th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2016-2A-02

Section

Optics and Photonics

Published

2016-08-18

How to Cite

[1]

PMB Tingzon, L Lopez, A De los Reyes, J Muldera, A Salvador, E Estacio, and A Somintac, Determining the dominant THz mechanism of highly doped silicon by applying an external magnetic field in the THz-TDS set-up, Proceedings of the Samahang Pisika ng Pilipinas 34, SPP-2016-2A-02 (2016). URL: https://proceedings.spp-online.org/article/view/SPP-2016-2A-02.