Terahertz radiation from MBE-grown p-InAs on GaAs/GaSb excited by 800-nm and 1.55 µm femtosecond lasers

  • Cyril Sadia National Institute of Physics, University of the Philippines Diliman
  • Lorenzo Lopez, Jr. Material Science and Engineering Program, University of the Philippines Diliman
  • Ramon delos Santos National Institute of Physics, University of the Philippines Diliman
  • Joselito Muldera Department of Physics, De La Salle University
  • Alexander De Los Reyes National Institute of Physics, University of the Philippines Diliman
  • Mae Agatha Tumanguil Material Science and Engineering Program, University of the Philippines Diliman
  • Christopher Que Department of Physics, De La Salle University
  • Valynn Mag-usara Research Center for Development of Far-Infrared Region, University of Fukui
  • Masahiko Tani Research Center for Development of Far-Infrared Region, University of Fukui
  • Elmer Estacio National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman
Keywords: molecular beam epitaxy, indium arsenide, ultrafast spectroscopy

Abstract

InAs (p-doped) is grown on a GaAs-buffered GaSb substrate via molecular beam epitaxy. The heterostructure is tested as an emitter in a terahertz time-domain spectroscopy system with a 1550-nm-wavelength femtosecond laser. We achieve an enhancement in the terahertz radiation intensity of approximately twice compared to that of bulk p-InAs. Pump power dependence of the THz signal (800-nm femtosecond laser excitation) show similar trend in the saturation fluence of the samples. Azimuthal-angle measurements reveal surge current mechanism via photo-Dember effect.

Published
2017-06-07
Section
Poster Session A (Experimental Materials Science and Photonics)