Terahertz emission characteristics of semi-insulating, zinc and manganese-doped gallium arsenide films

  • Alexander De Los Reyes National Institute of Physics, University of the Philippines Diliman
  • Elizabeth Ann Prieto National Institute of Physics, University of the Philippines Diliman
  • Karim Omambac National Institute of Physics, University of the Philippines Diliman
  • Lorenzo Lopez, Jr Material Science and Engineering Program, University of the Philippines Diliman
  • Karl Cedric Gonzales National Institute of Physics, University of the Philippines Diliman
  • Joselito Muldera Department of Physics, De La Salle University
  • Kohji Yamamoto Research Center for Development of Far-Infrared Region, University of Fukui
  • Masahiko Tani Research Center for Development of Far-Infrared Region, University of Fukui
  • Armando Somintac National Institute of Physics, University of the Philippines Diliman
  • Elmer Estacio National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman
Keywords: optical properties of semiconductors, infrared and Raman spectra of semiconductors, ultrafast spectroscopy

Abstract

We investigate the terahertz (THz) emission characteristics of semi-insulating gallium arsenide (SI-GaAs), zinc-doped GaAs (Zn-GaAs) and manganese-doped GaAs (Mn-GaAs) films. The THz emission from the samples were measured using a pump-probe type terahertz time-domain spectroscopy setup (THz-TDS). The roles of doping on the THz emission characteristics of the samples were studied. Results have shown that Mn-GaAs is a strong THz emitter, with a total THz radiated power that is 6X and 260X stronger than SI-GaAs and Zn:GaAs, respectively.

Published
2017-06-07
Section
Poster Session A (Experimental Materials Science and Photonics)