Photocarrier dynamics in MBE-grown GaAs-Al<sub>x</sub>Ga<sub>1-x</sub>As quantum well investigated via temperature-dependent photoluminescence and terahertz time-domain spectroscopy

  • Alexander E. De los Reyes National Institute of Physics, University of the Philippines Diliman
  • Jessica Pauline C. Afalla Research Center for Development of Far-Infrared Region, University of Fukui
  • Lorenzo P. Lopez, Jr. Materials Science and Engineering Program, University of the Philippines Diliman
  • John Daniel E. Vasquez Materials Science and Engineering Program, University of the Philippines Diliman
  • Maria Angela B. Faustino Materials Science and Engineering Program, University of the Philippines Diliman
  • Hannah R. Bardolaza Materials Science and Engineering Program, University of the Philippines Diliman
  • Roland V. Sarmago National Institute of Physics, University of the Philippines Diliman
  • Masahiko Tani Research Center for Development of Far-Infrared Region, University of Fukui
  • Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman
  • Elmer S. Estacio National Institute of Physics, University of the Philippines Diliman
Keywords: photoluminescence of III-V semiconductors (78.55. Cr), ultrafast spectroscopy (78.47.J) electron states and collective excitations in quantum wells (73.21.Fg)

Abstract

We report on the temperature effects on the dynamics and recombination characteristics of molecular beam epitaxy (MBE)-grown GaAs/AlxGa1-xAs quantum well using photoluminescence and terahertz time-domain spectroscopy. The photoluminescence spectra undergo a redshift as temperature increases, as described by the Varshni equation.  Furthermore, the terahertz emission was found to increase as temperature increases. This result is attributed to the increase in the number of phonon acting as scattering sites in the crystal lattice at higher temperatures, thus effectively decreasing carrier recombination lifetime.

Published
2017-06-07
Section
Ultrafast Optics, Photonics, and Terahertz Physics