Surface modification of (100) p-type silicon through Ar-O<sub>2</sub> and Ar-N<sub>2</sub> plasma treatment

  • Vincent Requero Mejarito Materials Science and Engineering Program, University of the Philippines Diliman
  • Audric Zuriel Cruz Cruz Department of Mining, Metallurgical and Materials Engineering, University of the Philippines Diliman
  • Magdaleno Vasquez Department of Mining, Metallurgical and Materials Engineering, University of the Philippines Diliman
  • Arnel A Salvador National Institute of Physics, University of the Philippines Diliman
Keywords: Silicon, FTIR, Plasma, Biomaterials, Contact Angle Measurement

Abstract

Silicon wafers were surface modified by the treatment of argon-oxygen (Ar-O2) and argon-nitrogen (Ar-N2) RF-frequency plasma, and characterized their changes in surface property using contact angle measurement and Fourier transform infrared spectroscopy (FTIR). The treatment of silicon wafers by Ar-O2 and Ar-N2 resulted in increased hydrophilicity for both treatment regimes. Silicon treated Ar-N2 plasma sample has the greater surface free energy compared to Silicon treated Ar-O2 plasma and the untreated sample. Subsequent Fourier-transform infrared spectroscopy results confirmed the presence of characteristic Si-O and Si-N bonds; however, due to the adsorbence of water, many of these peaks were not readily apparent. Surface morphological studies may be performed in order to view further effects of the plasma treatment.

Published
2017-06-07
Section
Poster Session A (Experimental Materials Science and Photonics)